Applying atomic layer etching for enhanced SiC-based photonic devices

Silicon carbide (SiC)-based integrated photonic devices, such as ring resonators, hold significant promise for future photonic applications. To minimize optical losses, a precise dry etching process that reduces damage during etching, such as atomic layer etching (ALE), is essential. In this study, we combine reactive ion etching (RIE), a rapid process, with ALE, which is slower. Atomic force microscopy (AFM), scanning electron microscopy (SEM), and photoluminescence (PL) imaging were used to characterize the surface morphology. It could be demonstrated that ALE can decrease the surface roughness and the defect luminesce.