Surface defect control during femtosecond laser drilling of single crystal SiC

Single-crystal silicon carbide (SiC), as a pivotal third-generation semiconductor material, exhibits extensive application potential in fields including 3C electronics and MEMS devices. The manufacturing of single-crystal SiC micro-vias represents a key enabling technology for advanced 2.5D and 3D packaging, analogous to Through-Silicon Via (TSV) technology. In this work, the effects of fundamental femtosecond laser parameters on the generation of surface defects (e.g., cracks and fractures) during femtosecond laser drilling were systematically studied. The research also elucidates the intrinsic correlation between the direction of crack generation, the crystalline orientation of SiC, and the laser polarization direction. Ultimately, defects including cracks and fractures were effectively eliminated via polarization modulation and optimized processing techniques.