Paper 14092-88
Paper 14092-88
Revealing nonlinear modal interactions in silicon nitride waveguides integrated with MoS2 monolayer through full vectorial description
On demand | Presented live 14 April 2026 
Abstract
We study second-harmonic generation (SHG) in silicon nitride (SiN) waveguides integrated with a monolayer of MoS2. We introduce a full vectorial–tensorial nonlinear model that captures the χ(2) response of the 2D material and the vectorial nature of the guided modes. The model reveals a key role played by the electric-field components along the waveguide axis, especially for nonlinear modal interactions with TM modes. We observed SHG in a SiN waveguide phase-matched for the TE0 → TM2 modal interaction, integrated with a 110 μm MoS2 monolayer whose armchair direction forms a 1.7° angle relative to the waveguide axis, successfully validating our model.
Presenter
Daniel A. Matos
Universidade de São Paulo (Brazil)
Daniel Alves Matos is a Ph.D. student at the Institute of Physics, University of São Paulo, Brazil, specializing in integrated photonics and nonlinear optics. His primary research focuses on the laser writing of optical devices, particularly the development of advanced waveguide–microfluidic architectures. His work further explores light–matter interactions in two-dimensional and layered materials, drawing on spectroscopic techniques and theoretical modeling to understand their nonlinear optical behavior. His broader interests include the design of hybrid photonic systems, the exploration of emergent optical responses in low-dimensional media, and the development of compact, versatile platforms for sensing and spectroscopy.