Paper 14093-41
Repetitive single-pulse vs 1-ns-delay double-pulse irradiation for bulk silicon modification at low repetition rate
15 April 2026 • 09:30 - 09:45 CEST | Curie A (Niveau/Level 1)
Abstract
The research work presents silicon laser processing with GHz bursts (emission wavelength at 1.6 um) for uniform column growth throughout the bulk of a 1 mm sample. Different burst configurations and burst parameters are explored for repeatable uniform column growth. While 2 pulse per burst was observed to be better compared to single pulse in terms of column growth, the energy distribution within the 2 pulses too have an effect on such modifications. Thanks to the optimization of different parameters, columns are generated with writing speeds such as 7 μm/s even in the absence of substrate glass.
Presenter
Akhil Kuriakose
Ctr. Lasers Intenses et Applications, Univ. de Bordeaux, CEA, CNRS (France)
Dr. Akhil Kuriakose started his scientific career at the International School of Photonics, India, where he completed his master in Photonics. His bachelor research focused on synthesis of platinum nanoparticles using laser ablation technique. He carried out his master thesis research at the University of Sydney, Australia, where he worked with the fusion-plasma group on table-top fusion reactor. Following this, he started his PhD as a Marie-Curie fellow at IFN-CNR, Italy. As a part of project LasIonDef, his work primarily focused on conductive graphitic electrode generation in diamond bulk using pulsed Bessel beams and graduated with cum laude. Currently, he is working as a postdoctoral fellow with SLAM-CELIA team as a part of project SILABUS at CNRS, France. His current research focuses on in-bulk modification in silicon using GHz laser bursts. Furthermore, he is an author of 7 articles in peer-reviewed journals and 14 conference contributions together with 1 book chapter.