Paper 14100-6
Paper 14100-6
Micro transfer printing integration of GaSb optoelectronic devices on SiGe.
13 April 2026 • 14:40 - 15:00 CEST | Boston/Salon 11 (Niveau/Level 1)
Abstract
This study presents the technological development carried out for the heterogeneous integration of Gallium-Antimonide (GaSb) based optoelectronic devices on Silicon-Germanium (SiGe) photonic circuit through the Micro-Transfer Printing (µTP) technique.
Presenter
Huiru Ren
Institut des Nanotechnologies de Lyon (France)
Huiru Ren received her Ph.D. from the Institut National des Sciences Appliquées de Lyon, France, and is currently a researcher at the Lyon Institute of Nanotechnology (INL), a joint research unit of CNRS. Her work focuses on micro/nanofabrication and heterogeneous integration for electronic and photonic systems. She specializes in process development and optimization, enabling rapid innovation. At SPIE, she presents micro-transfer printing for advanced heterogeneous integration and applications.