Paper 14093-53
Paper 14093-53
Laser Digital fabrication of 2D material-based Field Effect Transistors
15 April 2026 • 14:45 - 15:00 CEST | Curie A (Niveau/Level 1)
Abstract
Laser Induced Forward Transfer has been employed as a photonic and digital fabrication technology for the direct and high-quality assembly of 2D materials including graphene and 2D material semiconductors such as MoSe2 and MoTe2. The transfers have been carried out on test Field Effect Transistor devices and electrical characterization has been conducted to extract the resulting carrier mobilities. Additional characterization using Raman spectroscopy, AFM and SEM has confirmed the high quality of the of the transferred patterns.
Presenter
National Technical Univ. of Athens (Greece)
Filimon Zacharatos was born in Athens, Greece in 1981. He received the Physics diploma from Patras University in 2003 and the Ph.D. degree, specializing in nanotechnology, from the Physics department of (NTUA) in 2009. Until 2009, he had been working at the Institute of Microelectronics, of the National Center for Scientific Research “Demokritos” in Athens, as a Ph.D. researcher, investigating nanostructured materials for applications in Microelectronics and RF systems. Between 2011 and 2013 he worked in the field of Plasmonics in the sub-micron optics group of CNRS, University of Burgundy. Dr. Filimon Zacharatos is currently a postdoctoral researcher in the physics department of the National Technical University of Athens (NTUA), working within the framework of EC and national funded projects. His current research interests are mostly focused on the laser processing of nanomaterials, thin metal films and 2D materials.