Paper 14090-20
Paper 14090-20
Investigation of 775 nm emitting InGaAsP QW VECSEL for optimised efficiency and output power
13 April 2026 • 16:20 - 16:40 CEST | Leicester/Salon 12 (Niveau/Level 1)
Abstract
We would like to present our work on optimising an InGaAs QW VECSEL for emission at around 775 nm. Increasing the Indium content of our GaInP barriers enables absorption of a 675 nm pump laser, resulting in an increased efficiency compared to a 532 nm pumped VECSEL. To further increase the output power, a multi modal cavity setup was chosen.
Presenter
Rebecca Rühle
Institut für Halbleiteroptik und Funktionale Grenzflächen, Univ. Stuttgart (Germany)
Rebecca Rühle obtained her bachelor's and master's degrees in physics from the University of Stuttgart in 2018 and 2021, respectively. She is currently pursuing her PhD at the IHFG at the University of Stuttgart, focusing on VECSEL.