Paper 14100-24
Paper 14100-24
Hybrid integration of rare earth-doped chalcogenides with silicon photonics for mid-IR emission
14 April 2026 • 14:40 - 15:00 CEST | Boston/Salon 11 (Niveau/Level 1)
Abstract
This paper presents the development of a hybrid platform combining the outstanding mid-IR emission properties of rare earth-doped chalcogenides materials with the degrees of freedom and electro-optic functionalities offered by the Si photonics platform. Successful Dy3+-doped Ga5Ge20Sb10Se65 RF magnetron sputtering on Si strip and suspended Si subwavelength structures is first demonstrated. Broadband mid-IR emission up to 5 μm is then reported from these hybrid integrated chalcogenides-Si structures.
Presenter
Loïc Bodiou
Fonctions Optiques pour les Technologies de l'information (France)
Loïc Bodiou received his PhD from the University of Caen in 2007. His doctoral thesis focused on the luminescence of RE ions in nitride semiconductors. He subsequently worked as a postdoctoral fellow in Trinity College in Dublin (Ireland) on the plasmonic interactions between ordered metallic nanostructures and luminescent quantum dots and in CRHEA (CNRS UPR10, Valbonne) where his research concerned the epitaxy of GaN-based green lasers. He was appointed Associate Professor at Rennes University in 2009 and Full Professor in 2024, his research interests have been directed towards photonic integrated circuits, nonlinear effects, near- and mid-IR integrated light sources and optical sensing. In spring 2019, he was invited researcher in COPL (Québec, Canada) and worked on mid-IR Si photonics.