Applications of Raman spectroscopy for electronic-based systems

We explore Raman spectroscopy as a versatile, non-destructive tool for material characterization, offering insights into the structural, mechanical, and electronic properties of materials. This study highlights three exemplary applications in measuring stress in silicon, detecting point defects and lattice damage in silicon carbide, and sensing high pressure. In silicon, Raman spectroscopy reveals stress-induced shifts in the phonon peak and maps stress distributions and material compositions along cracks. For silicon carbide, it detects lattice damage and point defects like vacancies and dislocations. Its sensitivity also facilitates high-pressure sensing and phase transition analysis, underscoring its role in advancing semiconductor materials science.