Simulating rotated 1D patterns in anamorphic systems efficiently for lens aberration reconstruction from in-resist measurements

Accurate determination of lens aberrations is critical for achieving high imaging performance in high-NA EUV scanners. Traditional interferometric sensors provide high-resolution wavefront measurements, but their indirect nature makes it essential to validate these results against features printed directly in resist. In this work, we present an in-resist aberration measurement method based on rotated 1D features combined with an efficient rotated-1D simulation approach. By counter-rotating the optical system rather than the mask pattern, the method enables fast and accurate simulation of arbitrary feature orientations without the staircasing artifacts and computational cost associated with full 2D mask models. Using multiple feature angles and several annular illumination pupils, the technique provides sensitivity to both angular and radial Zernike orders. Application of the method to a high-NA EXE:5000 tool shows good agreement between experimental measurements and model predictions, confirming the sensor-derived wavefront with wafer-level features. This methodology provides an effective and scalable complement to built-in sensors, offering direct wafer-level validation without additional hardware.