Sensors Unlimited, a Raytheon Company

The 1280JSX+MMT represents the latest in SWIR imaging, combining high-definition 1280 x 1024 resolution with multi-mode (MMT) for laser pulse detection and tracking capabilities in HD. The product is specifically designed for the warfighter with cutting-edge laser tracking and decoding of multiple asynchronous sources, simultaneously for covert applications, supporting day/night operations with enhanced HD image quality and real-time, field-ready performance. Equipped with a highly sensitive focal plane array (FPA), the camera ensures three-point parameterized non-uniformity corrections PNUC) which significantly enhance image quality and performance across full temperature ranges. Its full field-of-view (FOV) laser pulse detection supports multimode tracking and asynchronous laser pulse detection (ALPD), enabling rapid identification of battlefield targeting lasers, including covert eye-safe wavelengths. SUI’s patented pixel architecture maximizes signal capture with an unparalleled 99.9% duty cycle, across infinite analog gain states. This innovative method, combined with MMT laser pulse detection circuitry, allows for precise identification of laser aim points on the battlefield, even with slow repetition rates or narrow pulse width lasers. The camera enhances coordination with air, amphibious, and ground combat units engaged in designating, marking, and transferring targets using coded lasers. It also enables operators to monitor targets and associated laser energy during the deployment of laser-guided munitions.

The compact 1280JSX-10µm VIS/SWIR digital video camera from Sensors Unlimited features a 1.3MP high-resolution, high-sensitivity indium gallium arsenide (InGaAs) imager. Leveraging our patented GMOD pixel architecture, the next-generation HD 10µm design is ideal for persistent surveillance and laser detection while delivering enhanced performance for both low-light and daylight imaging applications. The camera offers real-time imaging across an extended 0.5–1.7µm wavelength range. Thanks to advances in InGaAs processing and fabrication, this reduced 10µm pixel design maintains the spectral response, dynamic range, and noise performance of the previous 12.5µm generation. Mechanical, electrical, and command interfaces remain identical, enabling seamless drop-in replacement into existing systems. A key advancement in the 1280JSX-10µm is its reduced pixel size, downsizing to a 10µm square while maintaining a 100% fill factor. This 36% decrease in active area enables the use of smaller, lighter, and more cost-effective optics without sacrificing performance. Equipped with onboard automatic gain control (AGC) and built-in non-uniformity corrections (NUCs), the camera excels in high-dynamic range urban night environments without image blooming. It features Camera Link® digital output, delivering 12-bit images for effortless digital image processing or transmission. Its lightweight, compact design is ideal for integration into small gimbals, unmanned aircraft systems (UAS), handheld devices, and robotic platforms and for applications including battlefield surveillance, drone detection, missile and vehicle tracking, terrain analysis, resource mapping, and low-light operations through atmospheric obscurants.

The eSWIR 640CSX+MMT represents the latest in eSWIR 2D imaging – up to 2.2 µm spectral response with multi-mode tracking (MMT) for asynchronous laser pulse detection and decoding of multiple asynchronous sources, simultaneously. It’s designed for covert applications, supporting day/night operations with enhanced image quality and real-time, field-ready performance. Equipped with a highly sensitive focal plane array (FPA), the camera ensures three-point parameterized non-uniformity corrections (PNUC) which significantly enhance image quality and performance across full temperature ranges. Its full field-of-view (FOV) laser pulse detection supports multimode tracking and asynchronous laser pulse detection (ALPD), enabling rapid identification of battlefield targeting lasers, including covert eye-safe wavelengths. SUI’s patented pixel architecture maximizes signal capture with an unparalleled 99.9% duty cycle, across infinite analog gain states. This innovative method, combined with MMT laser pulse detection circuitry, allows for precise identification of laser aim points on the battlefield, even with slow repetition rates or narrow pulse width lasers. The camera enhances coordination with air, amphibious, and ground combat units engaged in designating, marking, and transferring targets using coded lasers. It also enables operators to monitor targets and associated laser energy during the deployment of laser-guided munitions. Custom capabilities allow customers to collaborate with SUI to create targeted solutions for their specific eSWIR 2D FPA requirements.

Sensors Unlimited, Inc. (SUI), a Raytheon company, offers III-V foundry services for customized and standard infrared technology, from wafer processing and silicon integrated circuit hybridization to testing and device packaging. A U.S. DOD Trusted Foundry, SUI provides commercial and military customers with domestic manufacturing and test capabilities backed by our more than 30-year history of industry performance. Located in Princeton, New Jersey, SUI’s facility features 5,000 sq. ft. of cleanroom space, including Class 1000 space for most wafer processing and Class 100 space for your most critical steps. The 2,000 sq. ft. Class 10,000 packaging lab ensures that cleanliness is maintained throughout device production. SUI is ISO 9001 certified and routinely handles ITAR-controlled and other sensitive technology Access to SUI’s full suite of wafer fabrication processes gives our customers a proven path to high-performance infrared devices for terrestrial and space applications without the necessity of maintaining their own manufacturing lines. SUI can handle 50 mm, 75 mm and 100 mm diameter III-V wafers (InGaAs/InP, InSb), and offers indium bumping on silicon wafers of up to 200 mm in diameter. Customers can select any or all of our available wafer processes. Our complete solution includes: in-house custom device design, epitaxial growth, fabrication, packaging and flip chip hybridization of opto-electronic components to other circuits. A state of the art characterization facility provides the customer with complete diode parameters ranging from simple IV characteristics to low temperature responsivity testing. We have the needed expertise and experience to design CMOS readout circuitry for integration with our state of the art sensing technology. Typical InP/InGaAs custom designs can be delivered in 6-8 weeks. Total customer satisfaction is our number one priority so we strive to manufacture III-V materials and CMOS circuitry that fit our customers needs in all aspects of design, performance and quality standards. Our facilities define flexibility. Beyond the design and manufacturing, integrating them into custom packaging and testing can also be performed at our facilities. Our scientists and engineers work closely with our customers to ensure that their vision is accomplished and the design is completed on time. Furthermore, if a total solution is not what you are looking for, we offer a variety of "in-between" steps such as: indium deposition, wafer growth and any processing step used in III-V device manufacturing. Sensors Unlimited builds a complete system optimizing your device design for bandwidth, sensitivity, noise, and cross talk by thoroughly modeling the wafer structure and device layout. Our broad experience of InGaAs/InP design and manufacturing can produce large-scale detector arrays, APDs, PINs, JFETs as well as extended wavelength detectors to 2.5mm.